ACE8212BTM データシートの表示（PDF） - ACE Technology Co., LTD.
部品番号
コンポーネント説明
メーカー
ACE8212BTM
ACE Technology Co., LTD.
ACE8212BTM Datasheet PDF : 9 Pages
| |||
ACE8212B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
Maximum Body-Diode
Continuous Current
Drain-Source On-Resistance
(TSSOP-8)
Drain-Source On-Resistance
(DFN2*5)
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Input Capacitance
Output Capacitance
REVERSE Transfer
Capacitance
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
Conditions
Static
VGS=0V, ID=250 uA
VDS=VGS, IDS=250uA
VDS=0V,VGS=±12V
VDS=20V, VGS=0V
Min. Typ. Max. Unit
20
V
0.5 0.72
1
10 uA
1
uA
IS
RDS(ON)
RDS(ON)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VGS=10V, ID=8A
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=3A
VGS=10V, ID=8A
VGS=4.5V, ID=7A
VGS=2.5V, ID=6A
VGS=1.8V, ID=4.5A
VDS=10V,ID=8A
ISD=1A, VGS=0V
Switching
VDS=10V, VGS=4.5V, ID=8A
VGS=10V, RL=10Ω, VDS=10V,
RGEN=3Ω
Dynamic
VGS=0V, VDS=10V, f=1MHz
2.4 A
8.2
13
9.2
14
mΩ
12
19
18
27
10
13
11
16
mΩ
14
22
21
35
30
S
0.72 1.0 V
4.65 6.05
1.12 1.46 nC
3.72 4.84
487.6 975.2
800.4 1600.8
ns
1728 3456
6180 12360
36.45
183.88
pF
14.57
VER 1.2 3
Share Link: