AP40G120W データシートの表示（PDF） - Advanced Power Electronics Corp
部品番号
コンポーネント説明
メーカー
AP40G120W Datasheet PDF : 3 Pages
| |||
1000
100
10
V GE =15V
T j =150 o C
1
10
100
1000
10000
V CE , Collector-Emitter Voltage(V)
Fig 7. Rever Bias SOA
20
T C =25 o C
15
I C = 80 A
40 A
20 A
10
5
0
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
250
200
150
100
50
0
0
50
100
150
200
Junction Temperature ( ℃ )
Fig11. Power Dissipation vs. Junction
Temperature
AP40G120W
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 8. Effective Transient Thermal
Impedance
20
TC=150oC
15
IC=80A
40A
20 A
10
5
0
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
16
I C = 4 0A
12
V CC =300V
V CC =400V
V CC =500V
8
4
0
0
40
80
120
160
Q G , Gate Charge (nC)
Fig 12. Gate Charge Characterisitics
3
Share Link: 