2SD2580 データシートの表示（PDF） - SavantIC Semiconductor

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2SD2580

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2580

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0

VCEsat Collector-emitter saturation voltage IC=8 A;IB=1.6A

VBEsat

Base-emitter saturation voltage

IC=8 A;IB=1.6A

ICBO

Collector cut-off current

VCB=800V; IE=0

800

V

5

V

1.5

V

10

µA

ICES

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

tf

Fall time

VCE=1500V ;RBE=0

VEB=4V; IC=0

40

IC=8A ; VCE=5V

5

IC=1A ; VCE=5V

15

IC=6A;RL=33.3@

IB1=1.2A;-IB2=2.4A;VCC=200V

1.0

mA

130 mA

8

30

0.3

µs

2

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