2SC3356-T1B-A データシートの表示（PDF） - California Eastern Laboratories.
部品番号
コンポーネント説明
メーカー
2SC3356-T1B-A Datasheet PDF : 9 Pages
| |||
NE85633 / 2SC3356
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1.0 V, IC = 0
hFE Note 1 VCE = 10 V, IC = 20 mA
fT
VCE = 10 V, IC = 20 mA
⏐S21e⏐2 VCE = 10 V, IC = 20 mA, f = 1 GHz
NF VCE = 10 V, IC = 7 mA, f = 1 GHz
Cre Note 2 VCB = 10 V, IE = 0, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
<R> hFE CLASSIFICATION
Rank
Marking
hFE Value
Q/YQ
R23
50 to 100
R/YR
R24
80 to 160
S/YS
R25
125 to 250
A Business Partner of Renesas Electronics Corporation.
MIN.
TYP. MAX.
Unit
–
–
1.0
μA
–
–
1.0
μA
50
120
250
–
–
7
–
GHz
–
11.5
–
dB
–
1.1
2.0
dB
−
0.55
1.0
pF
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 2 of 7
Share Link: 