2SC3356Q データシートの表示（PDF） - MAKO SEMICONDUCTOR CO.,LIMITED

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2SC3356Q

TRANSISTOR (NPN)

MAKO SEMICONDUCTOR CO.,LIMITED 

2SC3356

TRANSISTOR (NPN)

FEATURES

SOT-23-3L

MPower dissipation

1. BASE

PCM:

0.2 W (Tamb=25℃)

A Collector current

KICM:

0.1 A

O Collector-base voltage

V(BR)CBO: 20

V

SEM Operating and storage junction temperature range

2. EMITTER

3. COLLECTOR

2. 80¡ À0. 05

1. 60¡ À0. 05

TJ, Tstg: -55℃ to +150℃

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise

ON Parameter

D Collector-base breakdown voltage

U Collector-emitter breakdown voltage

C Emitter-base breakdown voltage

TOR Collector cut-off current

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

Test conditions

Ic=10µA, IE=0

Ic= 1mA, IB=0

IE= 10µA, IC=0

VCB= 10 V, IE=0

specified)

MIN TYP

20

12

3

MAX UNIT

V

V

V

1 µA

Emitter cut-off current

DC current gain

Transition frequency

Noise figure

IEBO

hFE

fT

NF

VEB= 1V , IC=0

C VCE= 10V, IC= 20mA

50

O VCE=10V, IC= 20mA

6

.,LIM VCE=10V, IC= 7mA, f = 1GHz

1 µA

300

GHz

2

dB

CLASSIFICATION OF hFE

Marking

R23

R24

ITRE25D

Rank

Q

R

S

Range

50-100

80-160

125-250

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