BF998WR データシートの表示（PDF） - Philips Electronics
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BF998WR Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF998WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
ID
IG1
IG2
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
MIN.
−
−
−
−
up to Tamb = 45 °C; see Fig.2; note 1 −
−65
−
Note
1. Device mounted on a printed-circuit board.
MAX.
12
30
±10
±10
300
+150
+150
UNIT
V
mA
mA
mA
mW
°C
°C
400
handbook, halfpage
Ptot
(mW)
300
MLD154
200
100
0
0
50
100
150
200
Tamb (oC)
Fig.2 Power derating curve.
1997 Sep 05
3
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