BF998WR データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
BF998WR Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF998WR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
CONDITIONS
note 1
note 2; Ts = 90 °C
VALUE
350
200
UNIT
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)G1-SS
V(BR)G2-SS
V(P)G1-S
V(P)G2-S
IDSS
IG1-SS
IG2-SS
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
CONDITIONS
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = 4 V; VDS = 8 V; ID = 20 µA
VG1-S = 0; VDS = 8 V; ID = 20 µA
VG2-S = 4 V; VDS = 8 V; VG1-S = 0
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 5 V
MIN.
6
6
−
−
2
−
−
MAX. UNIT
20
V
20
V
−2.5 V
−2
V
18
mA
50
nA
50
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; ID = 10 mA; VDS = 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance pulsed; Tj = 25 °C
22
input capacitance at gate 1 f = 1 MHz
−
input capacitance at gate 2 f = 1 MHz
−
drain-source capacitance f = 1 MHz
−
reverse transfer capacitance f = 1 MHz
−
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt −
f = 800 MHz; GS = 3.3 mS; BS = BSopt −
25
2.1
1.2
1.05
25
0.6
1
MAX.
−
2.5
−
−
−
−
−
UNIT
mS
pF
pF
pF
fF
dB
dB
1997 Sep 05
4
Share Link: 