BF998WR データシートの表示（PDF） - Philips Electronics

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BF998WR

N-channel dual-gate MOS-FET

Philips Electronics 

Philips Semiconductors

N-channel dual-gate MOS-FET

Product specification

BF998WR

VDD

VAGC

1 nF

50 Ω

input

VDD

C1

5.5 pF

47

kΩ

1 nF

140 kΩ

L1

1 nF

15 pF

100

kΩ

D1

330

BB405 kΩ

1 nF

V tun

input

47 µF

1 nF

20 µH

1 nF

1 nF

1.8

50 Ω

kΩ

L2

input

1 nF

360

Ω

10 pF

D2

330

BB405 kΩ

1 nF

V tun

output MGC481

VDD = 12 V; GS = 2 mS; GL = 0.5 mS.

L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.

L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.

Tapped at approximately half a turn from the cold side, to adjust GL = 0.5 mS. C1 adjusted for GS = 2 mS.

Fig.15 Gain control testcircuit at f = 200 MHz.

1997 Sep 05

8

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