BUX84 データシートの表示（PDF） - Philips Electronics

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BUX84

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUX84; BUX85

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a TO-220AB package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems

• Switching applications.

PINNING

PIN

DESCRIPTION

1

base

2

collector; connected to mounting base

3

emitter

MBK106

123

2

1

MBB008

3

Fig.1 Simplified outline (TO-220AB) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCESM

collector-emitter peak voltage

BUX84

BUX85

VCEO

collector-emitter voltage

BUX84

BUX85

VCEsat

IC

ICM

Ptot

tf

collector-emitter saturation voltage

collector current (DC)

collector current (peak value)

total power dissipation

fall time

CONDITIONS

VBE = 0

open base

IC = 1 A; IB = 200 mA; see Fig.7

see Figs 4 and 5

see Figs 4 and 5

Tmb ≤ 25 °C; see Fig.8

resistive load; see Fig.11

TYP.

−

−

−

−

−

−

−

−

0.4

MAX.

UNIT

800

V

1 000

V

400

V

450

V

1

V

2

A

3

A

40

W

−

µs

THERMAL CHARACTERISTICS

SYMBOL

Rth j-mb

Rth j-a

PARAMETER

thermal resistance from junction to mounting base

thermal resistance from junction to ambient in free air

VALUE

2.5

70

UNIT

K/W

K/W

1997 Aug 13

2

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