5962R9563201TEC データシートの表示（PDF） - Intersil

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5962R9563201TEC

Radiation Hardened Quad Differential Line Driver

Intersil 

Die Characteristics

DIE DIMENSIONS:

2450µm x 4950µm x 533µm ±25.4µm

(97 x 195 x 21mils ±1mil)

METALLIZATION:

M1: Mo/Tiw

Thickness: 5800Å

M2: Al/Si/Cu

Thickness: 10kÅ ±1kÅ

SUBSTRATE POTENTIAL:

Internally connected to VDD.

May be left floating.

Metallization Mask Layout

HS-26CT31RH-T

BACKSIDE FINISH:

Silicon

PASSIVATION:

Type: SiO2

Thickness: 8kÅ ±1kÅ

WORST CASE CURRENT DENSITY:

< 2.0e5 A/cm2

TRANSISTOR COUNT:

285

PROCESS:

Radiation Hardened CMOS, AVLSI

HS-26CT31RH

AO (2)

AO (3)

ENABLE (4)

BO (5)

BO (6)

(14) DO

(13) DO

(12) ENABLE

(11) CO

(10) CO

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