GI508 データシートの表示（PDF） - Diode Semiconductor Korea
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GI508 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
GI500---GI510
FIG.1 -- FORWARD DERATING CURVE
6
5
4
3
S in g le P h a se
H alf W ave 60H Z
2
R esistive or
In d u ctiv e L o ad
1
0
25
50
75 100
125
150 175
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
40
20
10
TJ=25
Pulse Width=300uS
4
1
0.4
0.1
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
100
60
40
20
10
4
TJ=25
f=1MHz
2
.1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.2 --MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
80
60
40
TJ=125
8.3ms Single Half
Sine Wave
20
0
02
4 6 10
20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
10
TJ= 1 5 0
1
T J= 1 0 0
0.1
T J= 2 5
0.01
0
20
40 60
80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
10
PULSE DURATION, SEC
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