IRF9540S データシートの表示（PDF） - Vishay Semiconductors

部品番号

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IRF9540S

Power MOSFET

Vishay Semiconductors 

IRF9540S, SiHF9540S

Vishay Siliconix

VDS

VGS

Rg

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 12a - Unclamped Inductive Test Circuit

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

2000

1600

1200

ID

Top - 7.8 A

- 13 A

Bottom - 19 A

800

400

0 VDD = - 25 V

25

50

75

100 125

150 175

91079_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

- 10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

-

D.U.T. + VDS

VGS

- 3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

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Document Number: 91079

S11-1051-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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