BZX84C13 データシートの表示（PDF） - MAKO SEMICONDUCTOR CO.,LIMITED
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BZX84C13 Datasheet PDF : 5 Pages
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ELECTRICAL CHARACTERISTICS
Ta=25℃ unless otherwise specified
Type
Number
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
BZX84C43
Code
ZenerVoltage Range (Note 2)
Maximum Zener
Impedance
(Note 3)
Maximum
Reverse
Current
VZ@IZT
IZT
ZZT@IZT
ZZK@IZK
IZK
IR
Nom(V) Min(V) Max(V) (mA)
(Ω)
(mA)
(μA)
Z11
2.4
2.20
2.60
5
100
600
1.0
50
Z12
2.7
2.5
2.9
5
100
600
1.0
20
Z13
3.0
2.8
3.2
5
95
600
1.0
10
MZ14
3.3
Z15
3.6
Z16
3.9
3.1
3.4
3.7
Z17
Z1
Z2
Z3
Z4
4.3
4.0
4.7
4.4
A5.1
4.8
5.6
5.2
KO 6.2
5.8
Z5
6.8
6.4
Z6
7.5
7.0
Z7
8.2
7.7
Z8
9.1
8.5
Z9
10
9.4
Y1
11
10.4
Y2
12
11.4
Y3
13
12.4
Y4
15
13.8
Y5
16
15.3
Y6
18
16.8
Y7
20
18.8
Y8
22
20.8
Y9
24
22.8
Y10
27
25.1
Y11
30
28.0
Y12
33
31.0
Y13
36
34.0
3.5
5
95
600
1.0
5
3.8
5
90
600
1.0
5
4.1
5
90
600
1.0
3
4.6
5
90
600
1.0
3
5.0
5
80
500
1.0
3
5.4
5
60
480
1.0
2
6.0
5
40
400
1.0
1
6.6
5
10
150
1.0
3
7.2
5
7.9
5
8.7
5
S9.6
5
e10.6
5
m 11.6
5
12.7
5
i 14.1
5
c 15.6
5
o 17.1
5
n 19.1
5
d 21.2
5
23.3
5
u 25.6
5
c 28.9
2
t 32.0
2
or 35.0
2
15
80
1.0
2
15
80
1.0
1
15
80
1.0
0.7
15
100
1.0
0.5
20
150
1.0
0.2
20
150
1.0
0.1
25
150
1.0
0.1
30
170
1.0
0.1
30
200
1.0
0.1
40
200
1.0
0.1
45
225
1.0
0.1
55
225
1.0
0.1
55
250
1.0
0.1
70
250
1.0
0.1
80
300
0.5
0.1
80
300
0.5
0.1
80
325
0.5
0.1
38.0
2
90
350
0.5
0.1
Y14
39
37.0
41.0
2
130
350
0.5
0.1
Y15
43
40.0
46.0
2
100
700
1
0.1
VR
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
32
Temperature
Coefficent of
Zener voltage
@ IZT=5mA
mV/°C
Min
Max
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0.2
-2.7
1.2
-2.0
2.5
0.4
3.7
1.2
4.5
2.5
5.3
3.2
6.2
3.8
7.0
4.5
8.0
5.4
9.0
6.0
10.0
7.0
11.0
9.2
13.0
10.4
14.0
12.4
16.0
14.4
18.0
16.4
20.0
18.4
22.0
21.4
25.3
24.4
29.4
27.4
33.4
30.4
37.4
33.4
41.2
10
12
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms,pulse width =300μs.
3. f = 1kHZ.
MAKOSemiconductor
2
D$uJ0
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