2SC945H データシートの表示（PDF） - SUNMATE electronic Co., LTD

部品番号

コンポーネント説明

メーカー

2SC945H

SILICON EPITAXIAL PLANAR TRANSISTOR

SUNMATE electronic Co., LTD 

Electrical Characteristics TA = 25°C unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0

60

V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO IE=0.1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1 μA

Collector cut-off current

ICEO

VCE=50V,IB=0

0.1 μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

DC current gain

VCE=6V,IC=1mA

130

hFE

VCE=6V,IC=0.1mA

40

Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA

0.1 μA

400

0.3 V

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

VBE(sat)

fT

Cob

NF

IC=100mA, IB=10mA

VCE=6V, IC=10mA

f=30MHz

VCB=10V,IE=0,f=1MHz

VCE=6V, IC=0.1mA

f=1kMHz,Rg=10kΩ

150

3.0

4

1V

MHz

pF

10 dB

Range

Rank

L

130-200

H

200-400

2 of 3

Share Link: