CY7C1482BV33-167BZI データシートの表示（PDF） - Cypress Semiconductor
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CY7C1482BV33-167BZI Datasheet PDF : 36 Pages
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CY7C1480BV33, CY7C1482BV33, CY7C1486BV33
Pin Definitions (continued)
Pin Name
VDDQ
MODE
TDO
TDI
TMS
TCK
NC
I/O
Description
I/O power supply Power supply for the I/O circuitry.
Input static
Selects burst order. When tied to GND selects linear burst sequence. When tied to VDD
or left floating selects interleaved burst sequence. This is a strap pin and must remain
static during device operation. Mode Pin has an internal pull-up.
JTAG serial Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the
output
JTAG feature is not used, this pin must be disconnected. This pin is not available on
synchronous TQFP packages.
JTAG serial input Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
synchronous feature is not used, this pin can be disconnected or connected to VDD. This pin is not
available on TQFP packages.
JTAG serial input Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
synchronous feature is not used, this pin can be disconnected or connected to VDD. This pin is not
available on TQFP packages.
JTAG clock
–
Clock input to the JTAG circuitry. If the JTAG feature is not used, this pin must be
connected to VSS. This pin is not available on TQFP packages.
No connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are
address expansion pins and are not internally connected to the die.
Functional Overview
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. Maximum
access delay from the clock rise (tCO) is 3.0 ns (250 MHz device).
The CY7C1480BV33, CY7C1482BV33, and CY7C1486BV33
support secondary cache in systems using either a linear or
interleaved burst sequence. The interleaved burst order
supports Pentium and i486™ processors. The linear burst
sequence is suited for processors that use a linear burst
sequence. The burst order is user selectable, and is determined
by sampling the MODE input. Accesses may be initiated with the
Processor Address Strobe (ADSP) or the Controller Address
Strobe (ADSC). Address advancement through the burst
sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the rest
of the burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to all
four bytes. All writes are simplified with on-chip synchronous
self-timed write circuitry.
Three synchronous Chip Selects (CE1, CE2, and CE3) and an
asynchronous Output Enable (OE) provide easy bank selection
and output tri-state control. ADSP is ignored if CE1 is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW,
(2) CE1, CE2, CE3 are all asserted active, and (3) the write
signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if
CE1 is HIGH. The address presented to the address inputs (A)
is stored into the address advancement logic and the Address
Register while being presented to the memory array. The
corresponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data is
allowed to propagate through the output register and onto the
data bus within 3.0 ns (250 MHz device) if OE is active LOW. The
only exception occurs when the SRAM is emerging from a
deselected state to a selected state; its outputs are always
tri-stated during the first cycle of the access. After the first cycle
of the access, the outputs are controlled by the OE signal.
Consecutive single read cycles are supported. After the SRAM
is deselected at clock rise by the chip select and either ADSP or
ADSC signals, its output tri-states immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions are
satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1,
CE2, CE3 are all asserted active. The address presented to A is
loaded into the address register and the address advancement
logic while being delivered to the memory array. The write signals
(GW, BWE, and BWX) and ADV inputs are ignored during this
first cycle.
ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corre-
sponding address location in the memory array. If GW is HIGH,
then the write operation is controlled by BWE and BWX signals.
The CY7C1480BV33, CY7C1482BV33, and CY7C1486BV33
provide byte write capability that is described in the section Truth
Table for Read/Write on page 12. Asserting the Byte Write
Enable input (BWE) with the selected Byte Write (BWX) input,
selectively writes to only the desired bytes. Bytes not selected
during a Byte Write operation remain unaltered. A synchronous
self-timed Write mechanism is provided to simplify the Write
operations.
Because the CY7C1480BV33, CY7C1482BV33, and
CY7C1486BV33 are a common I/O device, the Output Enable
(OE) must be deasserted HIGH before presenting data to the
Document Number: 001-15145 Rev. *F
Page 9 of 36
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