BD675 データシートの表示（PDF） - Comset Semiconductors

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BD675

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

NPN BD675/A - BD677/A - BD679/A - BD681/A

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

IE=0 , VCB= 60 V

BD675/A -

- 0,2

IE=0 , VCB= 80 V

BD677/A -

- 0,2

IE=0 , VCB= 100 V

BD679/A -

- 0,2

ICBO

Collector cut-off IE=0 , VCB= 120 V

BD681/A -

current

IE=0 ,VCB = 30V, Tj= 150°C BD675/A -

-

-

0,2

2

mA

IE=0 ,VCB = 40V, Tj= 150°C BD677/A -

-

2

IE=0 ,VCB = 50V, Tj= 150°C BD679/A -

-

2

IE=0 ,VCB = 60V, Tj= 150°C BD681/A -

-

2

IB=0 , VCE= ½VCEOMAX

BD675/A -

- 0,5

ICEO

Collector cut-off

current

IB=0 , VCE= ½VCEOMAX

IB=0 , VCE= ½VCEOMAX

BD677/A -

BD679/A -

-

-

0,5

0,5

mA

IB=0 , VCE= ½VCEOMAX

BD681/A -

- 0,5

IEBO

Emitter cut-

offcurrent

IC=0, -VEB=5 V

-

-

5 mA

BD675/A 45 -

-

VCEO(SUS)

Collector-Emitter

sustaning Voltage

IB=0 , IC=50 mA

BD677/A 60 -

BD679/A 80 -

-

-

V

BD681/A 100 -

-

VCE(SAT)

Collector-Emitter

saturation Voltage

BD675, BD677, BD679, BD681

IC=1.5 A,IB=30 mA

BD675A, BD677A, BD679A, BD681A

IC=2 A,IB=40 mA

-

-

- 2,5

V

- 2.8

BD675, BD677, BD679, BD681

VCE=3 V, IC=500 mA

- 2200 -

BD675, BD677, BD679, BD681

hFE

DC Current Gain

VCE=3 V, IC=1,5 A

BD675, BD677, BD679, BD681

VCE=3 V, IC=4 A

750 -

-

- 1500 -

BD675A, BD677A, BD679A, BD681A

VCE=3 V, IC=2 A

750

-

-

VBE

Base-Emitter

Voltage(1&2)

BD675, BD677, BD679, BD681

VCE=3 V, IC=1,5 A

-

BD675A, BD677A, BD679A, BD681A

VCE=3 V, IC=2 A

-

- 2,5

V

- 2.5

hfe

Small signal

current gain

VCE=3 V, IC=1,5 A, f= 1 MHz

10 -

-

fhfe

Ut-off frequency VCE=3 V, IC=1,5 A

VF

Diode forward

voltage

IF=1,5 A

- 60 - kHz

- 1,5 -

V

I(SB)

Second-

breakdown

collector current

-VCE=50 V, tP= 20ms,non rep., without

heatsink

0,8

-

-

A

23/10/2012

COMSET SEMICONDUCTORS

2 |3

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