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BC846AWT1 データシートの表示(PDF) - Motorola => Freescale

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BC846AWT1
Motorola
Motorola => Freescale Motorola
BC846AWT1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846AWT1/D
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
COLLECTOR
3
BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol BC846 BC847 BC848 Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCBO
80
50
30
V
VEBO
6.0
6.0
5.0
V
IC
100
100
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
DEVICE MARKING
RqJA
PD
TJ, Tstg
833
2.4
– 55 to +150
°C/W
mW/°C
°C
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Collector – Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
BC846 Series
BC847 Series
BC848 Series
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
Min
Typ
Max
Unit
65
V
45
30
80
V
50
30
80
V
50
30
6.0
V
6.0
5.0
15
nA
5.0
µA
Thermal Clad is a trademark of the Bergquist Company.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

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