2SA1774FRA データシートの表示（PDF） - ROHM Semiconductor

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2SA1774FRA

General Purpose Transistor (-50V, -150mA)

ROHM Semiconductor 

2SA1774 FRA

　 　 　 　　 　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCBO

-60

V

VCEO

-50

V

VEBO

-6

V

IC

-150

mA

ICP*1

-200

mA

PD*2

150

mW

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Collector-base breakdown

voltage

BVCBO IC = -50μA

Collector-emitter breakdown

voltage

BVCEO IC = -1mA

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

BVEBO

ICBO

IEBO

VCE(sat)

hFE

IE = -50μA

VCB = -60V

VEB = -6V

IC = -50mA, IB = -5mA

VCE = -6V, IC = -1mA

Transition frequency

fT

VCE = -12V, IE = 2mA,

f = 100MHz

Output capacitance

Cob

VCB = -12V, IE = 0A,

f = 1MHz

Values

Min. Typ. Max.

Unit

-60

-

-

V

-50

-

-

V

-6

-

-

V

-

- -100 nA

-

- -100 nA

-

- -500 mV

120 - 560 -

- 140 - MHz

-

4.0 5.0 pF

hFE values are calssified as follows :

rank

Q

R

S

-

-

hFE

120-270

180-390

270-560

-

-

* Pw=1ms, Single Pulse,

*2 Each terminal mounted on a reference land

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　

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