2N5485(2005) データシートの表示（PDF） - Vishay Semiconductors
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2N5485 Datasheet PDF : 8 Pages
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2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
10
16
IDSS
8
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
100
rDS @ ID = 300 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
400
f = 1 kHz
80
12
gfs
8
6
300
rDS
60
gos
4
200
40
4
IDSS @ VDS = 10 V, VGS = 0 V
2
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
0
0
0
−2
−4
−6
−8
−10
VGS(off) − Gate-Source Cutoff Voltage (V)
100 nA
10 nA
1 nA
Gate Leakage Current
ID = 5 mA
1 mA
TA = 125_C
0.1 mA
100 pA
10 pA
1 pA
ID = 5 mA
TA = 25_C
IGSS @
125_C
1 mA
0.1 mA
IGSS @ 25_C
0.1 pA
0
10
8
4
8
12
16
20
VDG − Drain-Gate Voltage (V)
Output Characteristics
VGS(off) = −2 V
VGS = 0 V
6
−0.2 V
−0.4 V
4
−0.6 V
−0.8 V
−1.0 V
2
−1.2 V
0
0
−1.4 V
2
4
6
8
10
VDS − Drain-Source Voltage (V)
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4
100
20
0
0
0
−2
−4
−6
−8
−10
VGS(off) − Gate-Source Cutoff Voltage (V)
Common-Source Forward
Transconductance vs. Drain Current
10
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
8
6
TA = −55_C
25_C
4
125_C
2
0
0.1
15
12
9
6
3
0
0
1
10
ID − Drain Current (mA)
Output Characteristics
VGS(off) = −3 V
VGS = 0 V
−0.3 V
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−1.8 V
2
4
6
8
10
VDS − Drain-Source Voltage (V)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
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