2N5485(2005) データシートの表示（PDF） - Vishay Semiconductors
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2N5485 Datasheet PDF : 8 Pages
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2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10
VGS(off) = −2 V
VDS = 10 V
8
TA = −55_C
6
25_C
4 125_C
Transfer Characteristics
10
VGS(off) = −3 V
VDS = 10 V
8
TA = −55_C
25_C
6
125_C
4
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
VGS(off) = −2 V
VDS = 10 V
f = 1 kHz
8
TA = −55_C
6
25_C
4
125_C
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
VGS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300
TA = 25_C
240
VGS(off) = −2 V
180
−3 V
120
60
0
0.1
1
10
ID − Drain Current (mA)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
2
0
0
−0.6
−1.2
−1.8
−2.4
−3
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
8
TA = −55_C
6
25_C
4
125_C
2
0
0
−0.6
−1.2
−1.8
−2.4
−3
VGS − Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
gfs RL
AV + 1 ) RLgos
80
Assume VDD = 15 V, VDS = 5 V
10 V
RL + ID
60
40
20
0
0.1
VGS(off) = −2 V
−3 V
1
10
ID − Drain Current (mA)
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