PTB20111 データシートの表示（PDF） - Advanced Semiconductor

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PTB20111

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor 

PTB20111

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI PTB20111 is Designed for

General Purpose Class AB Power

Amplifier Applications up to 900 MHz.

FEATURES:

• 25 W, 860-900 MHz

• Silicon Nitride Passivated

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

20 A

VCBO

65 V

PDISS

159 W @ TC = 25 °C

TJ

-40 °C to +150 °C

TSTG

-40 °C to +150 °C

θJC

1.1 °C/W

PACKAGE STYLE .400 2L FLG

1 = COLLECTOR 2 = EMITTER 3 = BASE

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

BVCEO

IC = 100 mA

BVCES

IC = 100 mA

BVEBO

IE = 5.0 mA

hFE

VCE = 5.0 V

IC = 1.0 A

MINIMUM TYPICAL MAXIMUM

25

55

3.5

20

100

UNITS

V

V

V

---

PG

ηC

VCC = 25 V

ICQ = 200 mA

POUT = 85 W

f = 900 MHz

8.5

50

Ψ

VCC = 25 V

POUT = 60 W

f = 900 MHz

ICQ = 200 mA

9.5

dB

%

10:1

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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