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RL253 データシートの表示(PDF) - Diode Semiconductor Korea

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RL253
DSK
Diode Semiconductor Korea DSK
RL253 Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea
RL251 - - - RL257
PLASTIC SILICON RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 2.5 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC R-3,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method208
Polarity: Color band denotes cathode end
Weight:0.021 ounces,0.58 grams
Mounting position: Any
R-3
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate current by 20%.
RL
251
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length @TA=75
Peak forw ard surge current
VRRM
50
VRMS
35
VDC
50
IF(AV)
8.3ms single half-sine-w ave
IFSM
superimpoded on ratde load @TJ=125
Maximum instantaneous forw ard voltage
@ 2.5 A
VF
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
Typical junction capacitance (Note1)
CJ
Typical thermal resistance
(Note2)
R JA
Operaring junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
RL
252
RL RL
253 254
RL
255
RL
256
RL UNITS
257
100
200 400
600 800 1000
V
70
140 280
420 560
700
V
100
200 400
600 800 1000
V
2.5
A
150.0
1.1
5.0
50.0
25
30
-55----+150
-55----+150
A
V
A
pF
/W
www.diode.kr

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