DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UF1A データシートの表示(PDF) - Yea Shin Technology Co., Ltd

部品番号
コンポーネント説明
メーカー
UF1A Datasheet PDF : 2 Pages
1 2
DATA SHEET
SEMICONDUCTOR
UF1A~UF1M
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 Ampere
FEATURES
Glass passivated chip
Ultra fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
High temperature soldering : 260OC / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.003 ounces, 0.093 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SMB/DO-214AA Unit:inch(mm)
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
.096(2.44)
.083(2.13)
.050(1.27)
.030(0.76)
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
.008(.203)
.002(.051)
.220(5.59)
.200(5.08)
.012(.31)
.006(.15)
CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse V oltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward
Rectified Current @TL =75°C
I(AV)
Peak For ward Surge Current
8.3ms single half sine- wave
IFSM
superimposed on rated load (JEDEC METHOD)
Maxi mum f orward Voltage at 1.0A DC
VF
Maxi mum DC Reverse Cur rent
at Rated DC Blocking Voltage
@TJ =25°C
IR
@TJ =100°C
Maximum Reverse Recovery Time (Note 1)
TRR
UF1A
50
35
50
Typical Junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3 )
RθJL
Oper ating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
UF1B
100
70
100
1.0
UF1D
200
140
200
UF1G
400
280
400
UF1J
600
420
600
1.0
30
1.3
1.5
5
100
50
20
30
-55 to +150
-55 to +150
UF1K
800
560
800
UF1M
1000
700
1000
UNIT
V
V
V
A
1.7
75
10
A
V
uA
ns
pF
°C/W
°C
°C
http://www.yeashin.com
1
REV.02 20110725

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]