3SK298 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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3SK298

Silicon N-Channel Dual Gate MOS FET

Hitachi -> Renesas Electronics 

3SK298

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate 1 to source voltage

Gate 2 to source voltage

Drain current

Channel power dissipation

Channel temperature

Storage temperature

Symbol

VDS

VG1S

VG2S

ID

Pch

Tch

Tstg

Ratings

Unit

12

V

±8

V

±8

V

25

mA

100

mW

150

°C

–55 to +150

°C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

2

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