3SK298 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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3SK298 Datasheet PDF : 11 Pages
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Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
VDS = 6 V
f = 1 kHz
24
V G2S = 3.0 V
18
2.5 V
12
2.0 V
1.5 V
6
1.0 V
0.5 V
0
0.4 0.8 1.2 1.6 2.0
Gate1 to source voltage VG1S (V)
Noise Figure vs. Drain Current
3.0
VDS = 6 V
VG2S = 3 V
2.4
f = 200 MHz
1.8
1.2
0.6
0
1
2
5
10
20
Drain current ID (mA)
3SK298
Power Gain vs. Drain Current
30
24
18
12
6
0
1
2
VDS = 6 V
VG2S = 3 V
f = 200 MHz
5
10
20
Drain current I D (mA)
Power Gain vs. Drain to Source Voltage
30
24
18
12
6
VG2S = 3 V
I D = 10 mA
f = 200 MHz
0
2
4
6
8 10
Drain to source voltage VDS (V)
5
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