2SD633 データシートの表示（PDF） - SavantIC Semiconductor
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2SD633 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD633
2SD635
IC=50mA; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=6mA
VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=14mA
VBEsat
Base-emitter saturation voltage
IC=3A; IB=6mA
ICBO
Collector
cut-off current
2SD633 VCB=100V; IE=0
2SD635 VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=3V
hFE-2
DC current gain
IC=7A ; VCE=3V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=6mA
VCC=45V;RL=15A
Product Specification
2SD633 2SD635
MIN TYP. MAX UNIT
100
V
60
1.5
V
2.0
V
2.5
V
100
µA
2000
1000
3.0
mA
15000
0.8
µs
3.0
µs
2.5
µs
2
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