2SD1885 データシートの表示（PDF） - SavantIC Semiconductor
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2SD1885 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1885
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A;IB=1 A
VBEsat
Base-emitter saturation voltage
IC=5A;IB=1 A
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
ICBO
Collector cut-off current
VCB=800V; IE=0
ICES
Collector cut-off current
VCE=1500V; RBE=0
hFE-1
DC current gain
IC=1 A ; VCE=5V
hFE-2
tf
DC current gain
Fall time
IC=5A ; VCE=5V
IC=4A;RL=50?; IB1=0.8A
IB2=-1.6AVCC=200V
MIN TYP. MAX UNIT
5
V
1.5
V
800
V
1
mA
10
µA
1
mA
8
5
10
0.1
0.3
µs
2
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