HER501 データシートの表示（PDF） - Diode Semiconductor Korea

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HER501

HIGH EFFICIENCY RECTIFIERS

Diode Semiconductor Korea 

Diode Semiconductor Korea

HER501 --- HER508

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50

10

N 1.

N 1.

(+)

25VDC

(approx)

(-)

D.U.T.

1

NONIN-

DUCTIVE

OSCILLOSCOPE

(NOTE1)

PULSE

GENERATOR

(NOTE2)

trr

+0.5A

0

-0.25A

-1.0A

1cm

NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.

JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .

SET TIME BASE FOR 10/20 ns/cm

FIG.2 -- TYPICAL FORWARD CHARACTERISTIC

100

TJ=25

P u lse W id th= 3 0 0 µ S

10

5 0 \1 0 0 \2 0 0 V

1

3 0 0 \4 0 0 V

6 0 0 \8 0 0 \1 0 0 0 V

0 .1

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.4 -- TYPICAL JUNCTION CAPACITANCE

200

100

60

40

20

10

6

4

　　　　 TJ=25

2

1

0.1 0.2 0.4 1 2

HER506-HER508

HER501-HER505

4

10 20

40 100

REVERSE VOLTAGE,VOLTS

FIG.3 -- FORWARD DERATING CURVE z

6.0

5.0

4.0

3.0 Single Phase

Half Wave 60HZ

2.0 Resistive or

Inductive Load

0.375"(9.5mm)LEAD LENGTH

1.0

0

0

25

50 75 100 125 150 175

AMBIENT TEMPERATURE,

FIG.5 -- PEAK FORWARD SURGE CURRENT

200

TJ=25

8.3ms Single Half

Sine-Wave

HER501-HER505

100

HER506-HER508

0

1

50 1

50 100

NUMBER OF CYCLES AT 60Hz

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