BAS116 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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BAS116 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS116 SWITCHING DIODE
FEATURES
z Low leakage current applications
z Medium speed switching times
MARKING: JV
SOT-23
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Unit
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
VRRM
VRWM
75
V
VR
IFM
200
mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms
IFSM
2.0
A
Power Dissipation
PD
225
mW
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol
V (BR)
VF1
VF2
VF3
VF4
IR
Ctot
trr
Min
75
Typ Max Unit
V
0.9
V
1
V
1.1
V
1.25
V
5
nA
2
pF
3
μs
Conditions
IR=100μA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=0V,f=1MHz
IF=IR=10mA,Irr=0.1×IR ,
RL=100Ω
www.cj-elec.com
1
B,Oct,2014
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