BC817-25 データシートの表示（PDF） - Galaxy Semi-Conductor
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BC817-25 Datasheet PDF : 5 Pages
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Production specification
NPN General Purpose Amplifier
BC817-16/-25/-40
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=10μA IE=0
50
Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0
45
Emitter-base breakdown voltage
V(BR)EBO IE=10μA IC=0
5
Collector cut-off current
ICBO
VCB=25V IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
VEB=4V IC=0
100
VCE=1V IC=100mA
160
250
60
VCE=1V IC=300mA
100
170
IC=500mA IB=50mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA IB=50mA
Collecter capacitance
Transition frequency
Cob
VCB=10V,f=1MHz
fT
VCE=5V IC=50mA
f=100MHz
TYP MAX UNIT
V
V
V
0.1 μA
0.1 μA
250
400
600
0.7 V
1.2 V
6
pF
170
MHz
CLASSIFICATION OF HFE(1)
Rank
BC817-16
Range
100-250
Marking
6A
BC817-25
160-400
6B▪
BC817-40
250-600
6C
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C042
Rev.B
www.gmicroelec.com
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