1N4148 データシートの表示（PDF） - Temic Semiconductors
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1N4148 Datasheet PDF : 4 Pages
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1N4148.1N4448
Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
Test Conditions
IF=5mA
IF=10mA
IF=100mA
VR=20 V
VR=20 V, Tj=150 °C
VR=75 V
IR=100mA, tp/T=0.01,
tp=0.3ms
VR=0, f=1MHz,
VHF=50mV
VHF=2V, f=100MHz
IF=IR=10mA, iR=1mA
W IF=10mA, VR=6V,
iR=0.1xIR, RL=100
Type Symbol Min Typ Max Unit
1N4448
VF
0.62
1N4148
VF
1N4448
VF
IR
IR
IR
V(BR)
100
0.72 V
1
V
1
V
25
nA
50
mA
5
mA
V
CD
hr
45
trr
trr
4
pF
%
8
ns
4
ns
Typical Characteristics (Tj = 25_C unless otherwise specified)
1.2
1.0
IF = 100 mA
0.8
10 mA
0.6
1 mA
0.4
0.1 mA
0.2
0
–30
94 9169
0
30
60
90 120
Tj – Junction Temperature ( °C )
Figure 1. Forward Voltage vs. Junction Temperature
1000
100
1 N 4148
10
Scattering Limit
1
0.1
0
94 9170
Tj = 25°C
0.4
0.8
1.2
1.6 2.0
VF – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
2 (4)
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
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