1N5402A0G データシートの表示（PDF） - Taiwan Memory Technology
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1N5402A0G Datasheet PDF : 4 Pages
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CREAT BY ART
ORDERING INFORMATION
PART NO. PACKING CODE
A0
1N540x
(Note 1)
R0
B0
PACKING CODE
SUFFIX (*)
G
Note 1: "x" defines voltage from 50V (1N5400) to 1000V (1N5408)
*: Optional available
PACKAGE
DO-201AD
DO-201AD
DO-201AD
EXAMPLE
PREFERRED P/N PART NO.
1N5408 A0G
1N5408
PACKING CODE
A0
PACKING CODE
SUFFIX
G
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
1N5400 - 1N5408
Taiwan Semiconductor
PACKING
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
DESCRIPTION
Green compound
FIG.1 MAXMUM FORWARD CURRENT DERATING
CURVE
4
3
2
1
0
0
25
50
75
100
125
150
LEAD TEMPERATURE(oC)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=125°C
1
TJ=75°C
0.1
0.01
0.001
0
TJ=25°C
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
250
200
8.3ms Single Half Sine Wave
150
100
50
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 4 TYPICAL FORWARD CHARACTERISTICS
100
10
1
0.1
Pulse Width=300μs
1% Duty Cycle
0.01
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
Document Number: DS_D1406023
Version: G15
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