MBR10100 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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MBR10100

SCHOTTKY BARRIER RECTIFIER

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

MBR10100

MBR10100 SCHOTTKY BARRIER RECTIFIER

D FEATURE

· Schottky Barrier Chip

T · Guard Ring Die Construction for Transient Protection

.,L · Low Power Loss, High Efficiency

· High Surge Capability

· High Current Capability and Low Forward Voltage Drop

· For Use in Low Voltage, High Frequency Inverters, Free

O Wheeling. and Polarity Protection Applications

TTOO-2-22200AACC

11. .ACNAOTDHEODE

3.CATHODE

3. ANODE

123

13

C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

IC Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

N DC Blocking Voltage

Average Rectified Output Current

O (Note 1)

Non-Repetitive Peak Forward Surge Current

R 8.3ms Single half sine-wave superimposed on

rated load

T Repetitive Peak Reverse Surge Current

@ t≤ 2.0µs

C Voltage Rate of Change(Rated VR)

E Forward Voltage Drop @ IF=10A, TC=125℃

@ IF=10A, TC=25℃

L@ IF=20A, TC=125℃

@ IF=20A, TC=25℃

E Peak Reverse Current

@ TC= 25℃

at Rated DC Blocking Voltage @ TC=125℃

J Operating and Storage Temperature Range

Symbol

VRRM

VRWM

VR

IO

IFSM

IRRM

dv/dt

VF

IR

Tj, TSTG

Value

100

10

150

0.5

10000

0.7

0.8

0.85

0.95

0.1

6.0

-55 to +150

WENotes: 1. Thermal resistance junction to case mounted heat sink.

Unit

V

A

A

A

V/µs

V

mA

℃

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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