2SC1875 データシートの表示（PDF） - Inchange Semiconductor
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2SC1875 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.6A
ICES
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VCE=1500V; VBE=0
VCB=1000V; IE=0
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=10V
hFE-2
DC current gain
IC=2A ; VCE=10V
ts
Storage time
tf
Fall time
IC=2.5A ; IB1=-IB2=0.6A
Pw=20μs
Product Specification
2SC1875
MIN TYP. MAX UNIT
500
V
10
V
1.2
V
1.0
mA
20
μA
20
μA
10
35
5
25
10
μs
1.0
μs
2
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