2SB1440 データシートの表示（PDF） - Galaxy Semi-Conductor

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2SB1440

Silicon PNP epitaxial planer type

Galaxy Semi-Conductor 

Production specification

Silicon PNP epitaxial planer type

2SB1440

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP

Collector-base breakdown voltage

V(BR)CBO IC=-10μA IE=0

-50

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO IE=-10μA IC=0

-5

Collector cut-off current

ICBO

VCB=-20V IE=0

DC current gain

hFE

VCE=-2V IC=-0.2A

VCE=-2V IC=-1A

120

60

Collector-emitter saturation voltage VCE(sat) IC=-1A IB=-50mA

-0.2

Base-emitter saturation voltage

Transition frequency

VBE(sat)

fT

IC=-1A IB=-50mA

VCE=-10V,IC=-50mA,

f=200MHz

-0.85

150

Output Capacitance

Cobo

VCB=-10V f=1.0MHz IE=0

45

CLASSIFICATION HFE

Rank

R

S

MAX

-0.1

340

-0.3

-1.2

60

UNIT

V

V

V

μA

V

V

MHz

pF

Range

120-240

170-340

Marking

1L

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

E046

Rev.A

www.gmicroelec.com

2

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