2SC6054J データシートの表示（PDF） - Panasonic Corporation
部品番号
コンポーネント説明
メーカー
2SC6054J Datasheet PDF : 3 Pages
| |||
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC6054J
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2174J
Features
High forward current transfer ratio hFE
SS-Mini type package, allowing downsizing of the equipment and automatic
/ insertion through the tape packing.
e e. Absolute Maximum Ratings Ta = 25°C
c tag Parameter
Symbol Rating
Unit
n d le s Collector-base voltage (Emitter open)
VCBO
60
V
a e cyc Collector-emitter voltage (Base open)
VCEO
50
V
t life Emitter-base voltage (Collector open)
VEBO
7
V
n u duc Collector current
IC
100
mA
Pro Peak collector current
te tin four Collectorpowerdissipation
ing type n. Junction temperature
in n follow nce e d atio Storagetemperature
ICP
200
mA
PC
125
mW
Tj
125
°C
Tstg −55 to +125 °C
1.60+–00..0035
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5°
Unit: mm
0.12+–00..0013
1: Base
2: Emitter
3: Collector
Marking Symbol: 7M
SSMini3-F1 Package
a coed inclueddesmaintteennaancettiynpued ttyyppee test info.rjmp/en/ Electrical Characteristics Ta = 25°C±3°C
M is tinu lan ain con ed ut la ic.co Parameter
Symbol
Conditions
Min Typ Max Unit
p m dis tinu bo on Collector-base voltage (Emitter open)
con ed on L a nas Collector-emitter voltage (Base open)
/Dis plan disc g UR n.pa Emitter-base voltage (Collector open)
e in ico Collector-base cutoff current (Emitter open)
Danc llow em Collector-emitter cutoff current (Base open)
inten it fo w.s Forward current transfer ratio
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
60
V
50
V
7
V
0.1
µA
100
µA
160
460
Ma e vis ://ww Collector-emitter saturation voltage
as ttp Transition frequency
Ple h Collector output capacitance
VCE(sat) IC = 100 mA, IB = 10 mA
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
0.1 0.3
V
100
MHz
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
2.2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2005
SJC00343AED
1
Share Link: 