BD242 データシートの表示（PDF） - New Jersey Semiconductor

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BD242

3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 40 WATTS

New Jersey Semiconductor 

ELECTRICAL CHARACTERISTICS (T. = 25*C unless otherwise noted)

IsnWaCTenSUC

Symbol

Mln

OFF CHARACTERISTICS

Collector-Emitter Sustaining Vottage(1) BD241 .BD242

w

vCEO(n»)

45

( lc= 30mA,lB= 0 )

BD241A.BD242A

60

BD241B.BD242B

80

BD241C.BD242C

100

Collector Cutoff Current

(VCE=30V,IB»0)

(V^ 60V, IB= 0 )

'ceo

BD241M2/41A/42A

BD241 B/42B/41 C/42C

Collector Cutoff Currant

(VM= 45V, Vm= 0 )

(Vc,= 60V,V_= 0 )

(V..- 80V, V.," 0 )

(VCI= 100V.V,.= 0 )

'CES

BD241/42

BD241A/42A

BD241 B/42B

BD241C/42C

Emitter Cutoff Current

'no

(VEB-SV.IC-O)

ON CHARACTERISTICS (1)

DC Current Gain

(Vcj-4.OV.lc-1.OA)

(VC, = 4.0V. IC»3.0A)

Collector-Emitter Saturation Voltage

(lc = 3.0A.IB=600mA)

Base-Emitter On Voltage

(IC-3.0A.VC1=4.0V)

DYNAMIC CHARACTERISTICS

Current Gain-Bandwidth Prodct (2)

{le«600 mA, VcflO V, t* 1 MHz)

Small-Signal Current Gain

(lc-500mA,Vcg=10V,f=1 KHz)

(1) Pulse Test Pulse width - 300 M» , Duty Cycle ^ 2.0%

(2)fT

hFE

25

10

Vc«,

V«-

IT

3.0

hfe

20

Max

Unit.

V

mA

0.3

0.3

mA

0.2

0.2

0.2

0.2

mA

1.0

V

1.2

V

1.8

MHz

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