BD241 データシートの表示（PDF） - Inchange Semiconductor
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BD241 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD241/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD241
VCEO(SUS)
Collector-emitter
sustaining voltage
BD241A
BD241B
IC=30mA; IB=0
BD241C
VCEsat Collector-emitter saturation voltage
IC=3A;IB=0.6 A
VBE
Base-emitter on voltage
IC=3A ; VCE=4V
BD241/A VCE=30V; IB=0
ICEO
Collector cut-off current
BD241B/C VCE=60V; IB=0
BD241
VCE=45V; VBE=0
BD241A VCE=60V; VBE=0
ICES
Collector cut-off current
BD241B VCE=80V; VBE=0
BD241C VCE=100V; VBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
MIN TYP. MAX UNIT
45
60
V
80
100
1.2
V
1.8
V
0.3
mA
0.2
mA
1
mA
25
10
2
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