2N3866A データシートの表示（PDF） - Advanced Power Technology

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2N3866A

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology  

2N3866 / 2N3866A

FUNCTIONAL

Symbol

Test Conditions

GPE

Pout

ηC

Power Gain

Output Power

Collector Efficiency

Test Circuit-Figure 1

Pin = 0.1 W, VCE = 28Vdc

f = 400 MHz, TC = 25 C

Test Circuit-Figure 1

Pin = 0.1 W, VCE = 28Vdc

f = 400 MHz, TC = 25 C

Test Circuit-Figure 1

Pin = 0.1 W, VCE = 28Vdc

f = 400 MHz, TC = 25 C

Min.

10

1.0

45

Value

Typ.

-

-

-

Max.

-

-

-

Unit

dB

Watts

%

PIN

(RS=50 OHMS)

8-60

LS

POUT

(RL=50 OHMS)

8-60

RFC

L1

RFC

3-35

12

RFC

5.6 OHMS

1000

VCE = -28V

0.9-7

Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS.

L1: 2 TURNS No. 18 wire, ¼” ID, 1/8” long

Ls: 2 ¾TURNS No. 18 wire, ¼” ID, 3/16” long

Capacitor values in pF unless

otherwise indicated.

.

Tuning capacitors are air variable

2N3866.PDF 10-28-02

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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