BF720 データシートの表示（PDF） - Philips Electronics
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BF720 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistors
Product specification
BF720; BF722
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point note 1
106
K/W
25
K/W
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150 °C
emitter cut-off current
IC = 0; VEB = 5 V
DC current gain
IC = 25 mA; VCE = 20 V
collector-emitter saturation voltage IC = 30 mA; IB = 5 mA
feedback capacitance
IC = ic = 0; VCE = 30 V; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
−
50
−
−
60
MAX.
10
10
50
−
0.6
1.6
−
UNIT
nA
µA
nA
V
pF
MHz
1999 Apr 21
3
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