BTA316X-600E/DG,12 データシートの表示（PDF） - NXP Semiconductors.
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BTA316X-600E/DG,12 Datasheet PDF : 13 Pages
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NXP Semiconductors
BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
7. Static characteristics
Table 6. Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
IGT
gate trigger
VD = 12 V;
current
IT = 0.1 A;
see Figure 8
T2+ G+
T2+ G−
T2− G−
IL
latching current VD = 12 V;
IGT = 0.1 A;
see Figure 10
T2+ G+
T2+ G−
T2− G−
IH
holding current VD = 12 V;
IGT = 0.1 A;
see Figure 11
VT
on-state
voltage
IT = 18 A;
see Figure 9
VGT
gate trigger
VD = 12 V;
voltage
IT = 0.1 A;
see Figure 7
VD = 400 V;
IT = 0.1 A;
Tj = 125 °C
ID
off-state current VD = VDRM(max);
Tj = 125 °C
BTA316X-600B
BTA316X-800B
BTA316X-600C
BTA316X-800C
BTA316X-600E Unit
BTA316X-800E
Min Typ Max Min Typ Max Min Typ Max
2
-
50 2
-
35 -
-
10 mA
2
-
50 2
-
35 -
-
10 mA
2
-
50 2
-
35 -
-
10 mA
-
-
60 -
-
50 -
-
25 mA
-
-
90 -
-
60 -
-
30 mA
-
-
60 -
-
50 -
-
30 mA
-
-
60 -
-
35 -
-
15 mA
-
1.3 1.5 -
1.3 1.5 -
1.3 1.5 V
-
0.8 1.5 -
0.8 1.5 -
0.8 1.5 V
0.25 0.4 -
0.25 0.4 -
0.25 0.4 -
V
-
0.1 0.5 -
0.1 0.5 -
0.1 0.5 mA
BTA316X_SER_B_C_E_1
Product data sheet
Rev. 01 — 11 April 2007
© NXP B.V. 2007. All rights reserved.
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