BTA316X-800B データシートの表示（PDF） - NXP Semiconductors.

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BTA316X-800B

16 A Three-quadrant triacs high commutation

NXP Semiconductors. 

NXP Semiconductors

BTA316X series B, C and E

16 A Three-quadrant triacs high commutation

8. Dynamic characteristics

Table 7. Dynamic characteristics

Symbol Parameter Conditions

dVD/dt

rate of rise of

off-state

voltage

VDM = 0.67 ×

VDRM(max);

Tj = 125 °C;

exponential

waveform; gate open

circuit

dIcom/dt

rate of change

of

commutating

current

VDM = 400 V;

Tj = 125 °C;

IT(RMS) = 16 A;

without snubber;

gate open circuit

VDM = 400 V;

Tj = 125 °C;

IT(RMS) = 16 A;

dV/dt = 10 V/µs;

gate open circuit

VDM = 400 V;

Tj = 125 °C;

IT(RMS) = 16 A;

dV/dt = 1 V/µs; gate

open circuit

tgt

gate-controlled ITM = 20 A;

turn-on time VD = VDRM(max);

IG = 0.1 A;

dIG/dt = 5 A/µs

BTA316X-600B

BTA316X-800B

BTA316X-600C

BTA316X-800C

BTA316X-600E Unit

BTA316X-800E

Min Typ Max Min Typ Max Min Typ Max

1000 -

-

500 -

-

60 -

-

V/µs

20 -

-

15 -

-

5

-

- A/ms

-

-

-

-

-

-

8

-

- A/ms

-

-

-

-

-

-

12 -

- A/ms

-

2

-

-

2

-

-

2

-

µs

BTA316X_SER_B_C_E_1

Product data sheet

Rev. 01 — 11 April 2007

© NXP B.V. 2007. All rights reserved.

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