BSR19 データシートの表示（PDF） - Philips Electronics

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BSR19

NPN high-voltage transistors

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistors

Product specification

BSR19; BSR19A

FEATURES

• Low current (max. 300 mA)

• High voltage (max. 160 V).

APPLICATIONS

• General purpose switching and amplification

• Especially used for telephony applications.

DESCRIPTION

NPN high-voltage transistor in a SOT23 plastic package.

PNP complements: BSR20 and BSR20A.

MARKING

TYPE NUMBER

BSR19

BSR19A

MARKING CODE

U35

U36

PINNING

PIN

1

2

3

base

emitter

collector

DESCRIPTION

handbook, halfpage

3

3

1

1

Top view

2

2

MAM255

Fig.1 Simplified outline (SOT23) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

collector-base voltage

BSR19

BSR19A

VCEO

collector-emitter voltage

BSR19

BSR19A

ICM

peak collector current

Ptot

total power dissipation

hFE

DC current gain

BSR19

BSR19A

fT

transition frequency

CONDITIONS

open emitter

open base

Tamb ≤ 25 °C

IC = 10 mA; VCE = 5 V

IC = 10 mA; VCE = 10 V; f = 100 MHz

MIN.

MAX.

UNIT

−

160

V

−

180

V

−

140

V

−

160

V

−

600

mA

−

250

mW

60

−

80

−

100

300

MHz

1997 Apr 21

2

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