Philips Semiconductors
NPN high-voltage transistors
Product specification
BSR19; BSR19A
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 160 V).
APPLICATIONS
• General purpose switching and amplification
• Especially used for telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BSR20 and BSR20A.
MARKING
TYPE NUMBER
BSR19
BSR19A
MARKING CODE
U35
U36
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSR19
BSR19A
VCEO
collector-emitter voltage
BSR19
BSR19A
ICM
peak collector current
Ptot
total power dissipation
hFE
DC current gain
BSR19
BSR19A
fT
transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = 10 mA; VCE = 5 V
IC = 10 mA; VCE = 10 V; f = 100 MHz
MIN.
MAX.
UNIT
−
160
V
−
180
V
−
140
V
−
160
V
−
600
mA
−
250
mW
60
−
80
−
100
300
MHz
1997 Apr 21
2