BSR19 データシートの表示（PDF） - Philips Electronics
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BSR19 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistors
Product specification
BSR19; BSR19A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
ICBO
IEBO
hFE
hFE
hFE
VCEsat
VCEsat
Cc
fT
collector cut-off current
BSR19
IE = 0; VCB = 100 V
−
IE = 0; VCB = 100 V; Tamb = 100 °C −
collector cut-off current
BSR19A
IE = 0; VCB = 120 V
−
IE = 0; VCB = 120 V; Tamb = 100 °C −
emitter cut-off current
IC = 0; VEB = 4 V
−
DC current gain
IC = 1 mA; VCE = 5 V
BSR19
60
BSR19A
80
DC current gain
IC = 10 mA; VCE = 5 V
BSR19
60
BSR19A
80
DC current gain
IC = 50 mA; VCE = 5 V
BSR19
20
BSR19A
30
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
collector-emitter saturation voltage IC = 50 mA; IB = 5 mA
BSR19
−
BSR19A
−
collector capacitance
IE = 0; VCB = 10 V; f = 1 MHz
−
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 100
MAX.
100
100
50
50
50
−
−
250
250
−
−
150
250
200
6
300
UNIT
nA
µA
nA
µA
nA
mV
mV
mV
pF
MHz
1997 Apr 21
4
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