BSR19A データシートの表示（PDF） - NXP Semiconductors.
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BSR19A Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN high voltage transistors
Product data sheet
BSR19; BSR19A
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSR19
BSR19A
VCEO
collector-emitter voltage
BSR19
BSR19A
ICM
peak collector current
Ptot
total power dissipation
hFE
DC current gain
BSR19
BSR19A
fT
transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = 10 mA; VCE = 5 V
IC = 10 mA; VCE = 10 V; f = 100 MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSR19
BSR19A
VCEO
collector-emitter voltage
BSR19
BSR19A
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
160
V
−
180
V
−
140
V
−
160
V
−
600
mA
−
250
mW
60
−
80
−
100
300
MHz
MIN.
MAX.
UNIT
−
160
V
−
180
V
−
140
V
−
160
V
−
6
V
−
300
mA
−
600
mA
−
100
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
VALUE
500
UNIT
K/W
2004 Mar 15
3
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