2N5114 データシートの表示（PDF） - New Jersey Semiconductor

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2N5114

P-CHANNEL J-FET

New Jersey Semiconductor 

^Semi-Conductor LPtoducti, Dnc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

2N5114 2N5U5 2N51.6

P-CHANNEL J FET

TELEPHONE: (973) 376-2922

(212)227-6005

FAX:(973) 376-8960

ABSOLUTE MAXIMUM RATINGS (Tt = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol All Devieei Unit

Gate-Source Voltage '"

Drain-Source Voltage '"

Drain-Gate Voltage

Gate Current

Power Dissipation

TA - +25°C ' '

Vr,s

30

Vdc

VDS

30

Vdc

Vor,

30

Vdc

la

50

mAdc

PT

0.500

W

Storage Temperature Range

T.IS

-65 to +200 °C

1I) Symmetrical geometry allows operation of those units with source / drain leads interchanged.

(2) Derate linearly 3.0 mW/°C for TA > 25°C.

ELECTRICAL CHARACTERISTICS (T, = +Z5°C. unless nlhenvise noted)

Parameters / Test Conditions

Gate-Source Breakdown Voltage

VDS = 0, 1,-. = l . O n A d c

Drain-Source "On" State Voltage

Vos = OVdc, Ip = -15mAdc

Vm = 0V dc, ID - -7.0mA dc

VllS = 0V dc. ID = -3.0mA dc

2N5II4

2N5 1 1 5

2N5II6

Symbol

V(BRKiSS

Min.

30

Max.

-1.3

v,,s,,,nl

-0.8

-0.6

Gate Reverse Current

VDS -^ 0. VflS - 20V de-

IfiSS

500

Drain Current Cutoff

Vcs= 12V dc. Vns = - l 5 V d c

2N5II4

-500

Vos = 7.0Vdc, Vns = -!5Vdc

2N5II5

'worn

-500

Vos-5.0Vdc,VM--ISVdc

2N5II6

-500

Zero Gate Voltage Drain Current

Vfis = 0. V n , - - I S V d c

Vcis = 0. Vns = -l5Vdc

V.is-0. V,,s = - l 5 V d c

\e Cutoff

2N5II4

2N5II5

2N5II6

-30

-90

JDSS

-15

-60

-5.0

-25

TO-18

(TO-206AA)

V,« = -I5. l,, = -l OnAdc

VDS-"-l5, ID--I.QnA dc

V,,S--I5, !„ = -!. OrtAdc

2N5I14

2N5II5

2N51I6

5.0

10

V<is,,,«

3.0

6.0

1.0

4.0

Unit

Vdc

Vdc

pAdc

pAdc

mAdc

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Small-Signal Drain-Source "On" State Resistance

V(|S-0. lD--].OmAdc

2N5II4

2N5II5

2N5II6

Small-Signal Drain-Source "On" State Resistance

Vos = 0, TD = 0: f= 1kHz

2N5II4

2N5II5

2N5116

Small-Signal. Common-Source Short-Circuit Reverse Transfer Capacitance

Vt,s= !2Vdc. V,,s = 0

V(is = 7.0V dc, V|,s = 0

V,,s = 5.0Vdc, VDS = 0

2N5II4

2N5II5

2N5II6

Small-Signal, Common-Source Short-Circuit Input Capacitance

V,is = 0, V,)S = -l5Vdc, f= I.OMIIz

2N5I 14. 2N5I IS

2N5II6

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Turn-On Delay Time

2N5 1 14

2N5I15

2N5II6

Rise Time

Turn-Off Delay Time

2N5II4

2N5I15

2N5II6

2N51I4

2N5II5

2N51 16

See Figure 2 of

M1L-PRF-I9500/476

Symbol

r,Kl.,nl

Cf»

cm

Symbol

t,

Min.

Min.

Max.

Unit

75

100

n

175

75

100

f!

175

7.0

pF

25

27

*

Max.

Unit

6

10

25

ns

10

20

qs

35

6

g

t)S

20

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without

notice information rumished by NJ Semi-Conductors is believedto be both accurate and reliable nt the time of going to

press. HoweverNJ Semi-Conductorsassumesno responsibility for any errors or omissions discovered in its use. N J

Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

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