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MMDL6050 データシートの表示(PDF) - Willas Electronic Corp.

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MMDL6050 Datasheet PDF : 3 Pages
1 2 3
WILLAS
200mA Surface Mount Switching Diode - 70V
1.0A SURFACE MOUNT SCHOTTKYSBOADR-R3IE23R RPEaCckTIaFgIEeRS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
MMDL6F0M501T2H0R0U-M+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
+10bVetter8r2e0verse 2le.0akkage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power los1s0,0hµiHgh effiIcFiency.
0.1µF
tr
High current capability, low forward voltage drop.
Package outline
tp
t
10%
SOD-123H
IF
t 0.146(3.7)
0.130(3.r3r )
t
0.012(0.3) Typ.
High surge capability.
Guardring fo0r.1ovµeFrvoltage prDoUteTction.
90%
U5lt0rahOiUgThP-UspTeed switching.
50 INPUT
SilicPoUnLeSpEitaxial planar chip, metal silicoSnAjMuPnLcINtiGon.
INPUT SIGNAL
IR
GENERATOR
Lead-free parts
meet
environmental
OSCILLOSCOPE
standards of
VR
MIL-STD-19500 /228
i R(REC) = 1.0 m0A.071(1.8)
0.056(1.4)
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical dNaotteas: 1. A 2.0 kvariable resistor adjusted for a Forward Current (I F ) of 10mA.
Epoxy
:
UL94-V0
Notes: 2. Input pulse is
raNtoetdesf:la3m. tep
r»ett
ar
rr
da
n
t
adjusted
so
I
R(peak)
is
equal
to
10mA.
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Terminals :Plated tFeirgmuinraels1, .soRldeecroabvleerpyerTMimILe-SETqDu-7i5v0alent Test Circuit
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Dimensions in inches and (millimeters)
TYPICAL CHARACTERISTICS
W1e0i0ght : Approximated 0.011 gram
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temTpAe=ra85tu°Cre unless otherwiseTsAp=ec4i0fi°eCd.
1.0
Single phase10half wave, 60Hz, resistive of inductive load.
T A = 150°C
T A = 125°C
For capacitive load, derate current by 20%
RATINGS
T A = 85°C
T A =S2Y5M°CBOL FM120-MH FM130-MH0.F1M140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code1.0
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
12
13
14
15
16
18
10
115 120
VRRM
20
30 0.01 40
50
T6A0= 55°C 80
100
150
200
VRMS
14
21
28
35
42
56
70
105
140 V
Maximum DC Blocking Voltage
VDC
20
30
40
50
T6A0= 25°C 80
100
150
200 V
Maximum Av0e.r1a0g.2e Forward0.R4 ectified C0u.6rrent
0.8
IO 1.0
0.001
1.2
0
10
201.0
30
40
50
Peak Forward Surge CurrentV8.F3, mFsOsRinWglAe RhaDlf VsiOneL-TwAavGeE (VIFOSLMTS)
superimposed on rated load (JFEiDgEuCreme2th.odF) orward Voltage
Typical Thermal Resistance (Note 2)
RΘJA
V R , REVERS3E0 VOLTAGE (VOLTS)
Figure 3. Leakage Current
40
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
0.68
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
0.64
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=02.650
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
m
10
NOTES:
0.56
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.52
0.2
0.4
0.6
0.8
1.0
1.2
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.

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