DTC114TCA データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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DTC114TCA

Digital transistors (built-in resistors)

Jiangsu Changjiang Electronics Technology Co., Ltd 

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Symbol

Parameter

LIMITS(DTC114T□)

E

UA

KA

CA

SA

VCBO

Collector-Base Voltage

50

VCEO

VEBO

IC

PC

Tj

Collector-Emitter Voltage

50

Emitter-Base Voltage

5

Collector Current -Continuous

100

Collector Dissipation

150

200

300

Junction temperature

150

TJ, Tstg

Junction and Storage Temperature

-55~+150

Units

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

Ic=50µA,IE=0

Ic=1mA,IB=0

IE=50µA,IC=0

VCB=50V,IE=0

VEB=4V,IC=0

VCE=5V,IC=1mA

50

V

50

V

5

V

0.5 uA

0.5 uA

100 300 600

Collector-emitter saturation voltage

VCE(sat) IC=10mA,IB=1mA

0.3

V

Transition frequency

Imput resistor

fT

VCE=10V,IE=-5mA, f=100MHz

R1

250

MHz

7

10

13

kΩ

Typical Characteristics

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