MMFT3055EL データシートの表示（PDF） - Motorola => Freescale

部品番号

コンポーネント説明

メーカー

MMFT3055EL

MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS RDS(on) = 0.18 OHM

Motorola => Freescale 

MMFT3055EL

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 µA)

Zero Gate Voltage Drain Current, (VDS = 60 V, VGS = 0)

Gate–Body Leakage Current, (VGS = 15 V, VDS = 0)

ON CHARACTERISTICS

Gate Threshold Voltage, (VDS = VGS, ID = 1.0 mA)

Static Drain–to–Source On–Resistance, (VGS = 5 V, ID = 0.75 A)

Drain–to–Source On–Voltage, (VGS = 5 V, ID = 1.5 A)

Forward Transconductance, (VDS = 15 V, ID = 0.75 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 V,

VGS = 0,

f = 1 MHz)

SWITCHING CHARACTERISTICS

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD= 25 V, ID = 6 A

VGS = 5 V, RG = 50 ohms,

RGS = 25 ohms)

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

(VDS = 48 V, ID = 1.5 A,

VGS = 5 Vdc)

See Figures 15 and 16

SOURCE DRAIN DIODE CHARACTERISTICS(1)

Forward On–Voltage

IS = 1.5 A, VGS = 0

Forward Turn–On Time

Reverse Recovery Time

IS = 1.5 A, VGS = 0,

dlS/dt = 400 A/µs,

VR = 30 V

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ton

trr

Min

Typ

Max

Unit

60

—

—

Vdc

—

—

10

µAdc

—

—

100

nAdc

1

—

2

Vdc

—

—

0.18

Ohms

—

—

0.36

Vdc

—

2.1

—

mhos

—

500

—

—

175

—

pF

—

40

—

—

20

—

—

95

—

ns

—

38

—

—

50

—

—

7

15

—

1.3

—

nC

—

6.3

—

—

1.0

—

Vdc

Limited by stray inductance

—

55

—

ns

2

Motorola TMOS Power MOSFET Transistor Device Data

Share Link: